• Ultra-low, fA-level current and fF-level capacitance measurements from -65 °C to + 300 °C
• Guarantees fully-guarded measurements to fA and fF levels
• Individual connectors provide force-sense connection for quasi-Kelvin and CV measurements
• Allows probing of different pad materials and sizes
• Fast replacement of worn probes without the need for tools

• High performance power bypassing provides low-impedance and resonant-free connections to 20 GHz
• RF bandwidth to 500 MHz
• Long probe life: > 250,000 contacts
• Beryllium-copper tips for gold pads or tungsten for aluminum pads
• Oscillation-free testing of wide-bandwidth analog circuits
• Use with ACP series probes to provide functional at-speed testing for known-good-die
• Mix multiple contact types: Ground, Power (Standard or Eye-Pass), Logic/Signal
• Low and repeatable contact resistance on aluminum pads ( < 0.25 Ω on Al, < 0.01 Ω on Au)

• DC-40 GHz bandwidth
• 10 ps rise time
• Low insertion and return loss
• 2 mils of tip-to-tip compliance
• High probing angle and clearance

• Enables wafer probing up to 100 A pulsed and 10A DC
• Innovative multi-fingertip design provides even distribution of current
• Supports up to 500 V
• Replaceable Tungsten probe tips
• Temperature range of -60°C to 300°C
• Minimal contact resistance at the pad-tip junction to reduce heating during measurements, with fewer probe marks
• Prevents against thermal runaway
• Measure devices on wafer at higher currents than ever before
• Small scrub minimizes damage to aluminum pad
• Small footprint – tip fits on a 1 mm pad

• Coaxial and triaxial measurements up to 10,000 V
• High-quality construction with low-noise electrical performance
• Replaceable probe tips in a variety of tip sizes
• Temperature range of of -60°C to 300°C
• Triaxial measurement ensures a much better understanding of device leakage in the off state
• Highly reliable, stable and repeatable measurements
• Integrally designed as part of a complete measurement solution

• Lithographic thin-film construction
• Excellent crosstalk characteristics
• Non-oxidizing nickel alloy tips
• Innovative force delivery mechanism
• 40GHz, 50GHz, 67GHz, 110GHz and 145GHz connectors available
• GSG, SG, GS, GSGSG, GSSG, SGS configurations
• 50 to 250 µm pitches (other pitches available on request)
• High current version (2 A) available

Advantages

• Superior field confinement reduces unwanted couplings to nearby devices and transmission modes
• Superior measurement accuracy and repeatability
• Small scrub minimizes damage to aluminum pad
• Typical contact resistance < 0. 05 Ω on Al, <0.02Ω on Au
• Save valuable wafer space and reduce pad parasitics by being able to shrink pad geometries to 25 x 35 µ m (best case)

• Probe loss is 3 dB typical between 140 and 200 GHz, S11/S22 15 dB typical
• Reduced unwanted couplings and transmission modes
• Able to shrink pad geometries to 25 x 35 µm (best case)
• Typical contact resistance < 0.05 Ω on Al, < 0.02 Ω on Au
• WR15, WR12, WR10, WR8, WR6, WR4, WR3, and WR2 bands available.

• Customizable configuration up to 25 contacts: RF, Eye-Pass power, ground, logic
• Lithographically-defined tips allow automated over temperature measurement on pads as small as 30 µm x 50 µm
• Low and repeatable contact resistance on aluminum pads (< 0.05 Ω) ensures accurate results
• Durable probe structure ensures more than 250,000 contacts
• Able to measure from -40°C to +125°C without compromising performance or accuracy of specifications

Next Generation Wafer Probing

• Continues the Infinity family’s Industry leading electrical performance
• High temperature capability (175° C +) for automotive device characterization and other applications
• Better tip visibility for enhanced placement accuracy and repeatability
• Improved tip life/durability with solid rhodium contacts
• New tip architecture enables support for narrower pitches (e.g. 25um)
• Advanced mechanical design combined with small contacts enables probing on smaller pads/pitches and improves durability and robustness