High-voltage/current Probes

• On-wafer power device characterization up to 10,000 V DC / 600 A
• Reduced probe and device destruction at high currents up to 20 A DC and 300 A pulse
• Increased isolation resistance and dielectric strength to provide full triaxial capability at high voltage (3,000 V) for low-leakage measurement

Next Generation Wafer Probing

• Continues the Infinity family’s Industry leading electrical performance
• High temperature capability (175° C +) for automotive device characterization and other applications
• Better tip visibility for enhanced placement accuracy and repeatability
• Improved tip life/durability with solid rhodium contacts
• New tip architecture enables support for narrower pitches (e.g. 25um)
• Advanced mechanical design combined with small contacts enables probing on smaller pads/pitches and improves durability and robustness

Flexibility

• Different substrate carriers for wafers up to 200 mm or single dies
• Probe cards and/or up to eight positioners
• Use with liquid nitrogen or helium, depending on the target temperature. Or use of cryo-cooler for dry-cooling option.
• Accessories available, such as black bodies and optical motion analysis tools
• Optional upgrade for 300 mm wafer
• Designed for industrial environments
• Covers wide range of measurements (I-V, C-V, RF, MEMS, OPTO)
• Ideal for small structures

See "Specifications & Details" tab for more key features

Flexibility

• Different substrate carriers for wafers up to 200 mm or single dies
• Probe cards and/or up to eight positioners
• Optional thermal chuck (-60°C to 300°C) and pressure regulation
• Accessories available, such as black bodies and optical motion analysis tools
• Optional upgrade for 300 mm wafer
• Designed for industrial environments
• Covers wide range of measurements (I-V, C-V, RF, MEMS, OPTO)
• Ideal for small structures

See "Specifications & Details" tab for more key features

• Customizable configuration up to 25 contacts: RF, Eye-Pass power, ground, logic
• Lithographically-defined tips allow automated over temperature measurement on pads as small as 30 µm x 50 µm
• Low and repeatable contact resistance on aluminum pads (< 0.05 Ω) ensures accurate results
• Durable probe structure ensures more than 250,000 contacts
• Able to measure from -40°C to +125°C without compromising performance or accuracy of specifications

The TEM horn antenna is an antenna used for conducting close proximity radiation immunity evaluation test (near electromagnetic field immunity test) of electromagnetic waves radiated from various wireless transmitters such as mobile devices. 

In the future, close proximity radiation immunity evaluation test using the TEM horn antenna is expected to expand to various product standards such as medical equipment (IEC 60601-1-2) and multimedia equipment (CISPR 35).NoiseKen's TEM horn antenna has a wide band, low VSWR, and wide electric field uniformity offering an ideal solution for an efficient close proximity radiation immunity test. 

• A TEM horn antenna compliant with IEC 61000-4-39 Ed.1. 
• Test without changing the antenna in the frequency range of 380MHz to 6GHz. 
• Low VSWR and high GAIN enable efficient electromagnetic wave radiation. 
• Wide field uniformity reduces the number of times of movement of the antenna when radiating the EUT. 
• Since the maximum point of the near electric field distribution for each frequency is at the center, enables radiation on the EUT based on the axis of the antenna. Hence, significantly simplifies test point alignment.

Measurement Accuracy

• Best solution for high accuracy IV/CV, low-noise and 1/f measurements with PureLine, AutoGuard and next generation MicroChamber technologies
• Minimize AC and spectral noise with effective shielding capability
• Achieve unsurpassed RF/mmW measurement and calibration accuracy with integrated RF tools and WinCal
• Shortest signal path test integration for accurate, thermally stable, and low-error data collection

See "Specifications & Details" tab for more key features

• Probe loss is 3 dB typical between 140 and 200 GHz, S11/S22 15 dB typical
• Reduced unwanted couplings and transmission modes
• Able to shrink pad geometries to 25 x 35 µm (best case)
• Typical contact resistance < 0.05 Ω on Al, < 0.02 Ω on Au
• WR15, WR12, WR10, WR8, WR6, WR4, WR3, and WR2 bands available.