• Ideal for multiport RF/Microwave and high-speed digital signal testing
• Mix DC and RF/Microwave signals on one probe
• Long lifetime – typically over one million (1,000,000) touchdowns
• Excellent performance in temperatures ranging from 10 K to 200°C
• Probe on any pad material with no damage

Flexibility

• Different substrate carriers for wafers up to 200 mm or single dies
• Probe cards and/or up to eight positioners
• Use with liquid nitrogen or helium, depending on the target temperature
• Accessories available, such as black bodies and optical motion analysis tools
• Designed for industrial environments
• Covers wide range of measurements (I-V, C-V, RF, MEMS, OPTO)

See "Specifications & Details" tab for more key features

More than a calibration tool

• Calibration
• Validation
• Measurement
• Analysis

No one supports more VNA’s

• Support of more than 24 of the most common VNA’s

Tool for the novice

• Guided wizards and multimedia tutorials integrated
• Intelligence in setups

See "Specifications & Details" tab for more key features

• Probe loss is 3 dB typical between 140 and 200 GHz, S11/S22 15 dB typical
• Reduced unwanted couplings and transmission modes
• Able to shrink pad geometries to 25 x 35 µm (best case)
• Typical contact resistance < 0.05 Ω on Al, < 0.02 Ω on Au
• WR15, WR12, WR10, WR8, WR6, WR4, WR3, and WR2 bands available.

• Enables coaxial measurements up to 10,000 V and 300 A pulsed (600 A in a parallel configuration) with a single touchdown
• Even distribution of high current with innovative multi-fingertip design
• Compatible with TESLA 200/300 mm power device characterization system
• Reduced measurement time by testing both high-voltage and high-current conditions with a single touchdown
• Accurate characterization of a wide range of pad sizes and test currents, with minimum pad damage and contact resistance
• Safe, reliable and repeatable high-current/voltage measurements over a wide temperature range (from -55°C to +300°C)

Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight Photonics Application

• Lithographic thin-film construction
• Excellent crosstalk characteristics
• Non-oxidizing nickel alloy tips
• Innovative force delivery mechanism
• 40GHz, 50GHz, 67GHz, 110GHz and 145GHz connectors available
• GSG, SG, GS, GSGSG, GSSG, SGS configurations
• 50 to 250 µm pitches (other pitches available on request)
• High current version (2 A) available

Advantages

• Superior field confinement reduces unwanted couplings to nearby devices and transmission modes
• Superior measurement accuracy and repeatability
• Small scrub minimizes damage to aluminum pad
• Typical contact resistance < 0. 05 Ω on Al, <0.02Ω on Au
• Save valuable wafer space and reduce pad parasitics by being able to shrink pad geometries to 25 x 35 µ m (best case)

• High performance power bypassing provides low-impedance and resonant-free connections to 20 GHz
• RF bandwidth to 500 MHz
• Long probe life: > 250,000 contacts
• Beryllium-copper tips for gold pads or tungsten for aluminum pads
• Oscillation-free testing of wide-bandwidth analog circuits
• Use with ACP series probes to provide functional at-speed testing for known-good-die
• Mix multiple contact types: Ground, Power (Standard or Eye-Pass), Logic/Signal
• Low and repeatable contact resistance on aluminum pads ( < 0.25 Ω on Al, < 0.01 Ω on Au)