Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight PDA for On-wafer R&D Power Semiconductor Device Characterization Measurements

• Designed for use with specific Probe Systems
• Tables to suit all facility requirements and applications
• Stable probing, even in submicron range
• Granite platen ensures rigidity and temperature stability
• Can be combined with the Shield Enclosures

Flexibility

• Application flexibility: Coax, Triax, RF/mmW, High Power, Double Sided
• Temperatures range from -60°C to +300°C
• Surfaces are nickel or gold-plated
• Hybrid chuck design – operation with and without cooling unit
• Field-upgradeable: On-site cold upgrades for all main prober platforms

Highest Efficiency for Reduced Cost of Test

• Up to 25% lower air consumption (CDA) than other systems on the market with no compromise in transition times
• Up to 15% faster transition times than other systems on the market

High-voltage/current Probes

• On-wafer power device characterization up to 10,000 V DC / 600 A
• Reduced probe and device destruction at high currents up to 20 A DC and 300 A pulse
• Increased isolation resistance and dielectric strength to provide full triaxial capability at high voltage (3,000 V) for low-leakage measurement

• Full-radius, nickel-plated tungsten needles
• Power bypass inductance: 16 nH
• Supports collinear and non-standard needle configurations
• Support up to a maximum of 12 ceramic blades DC needles / contacts
• Ideal for probing the entire circuit for functional test
• DC probes can provide power or slow logic to circuit under test

• Customizable configuration up to 25 contacts: RF, Eye-Pass power, ground, logic
• Lithographically-defined tips allow automated over temperature measurement on pads as small as 30 µm x 50 µm
• Low and repeatable contact resistance on aluminum pads (< 0.05 Ω) ensures accurate results
• Durable probe structure ensures more than 250,000 contacts
• Able to measure from -40°C to +125°C without compromising performance or accuracy of specifications

• Coaxial and triaxial measurements up to 10,000 V
• High-quality construction with low-noise electrical performance
• Replaceable probe tips in a variety of tip sizes
• Temperature range of of -60°C to 300°C
• Triaxial measurement ensures a much better understanding of device leakage in the off state
• Highly reliable, stable and repeatable measurements
• Integrally designed as part of a complete measurement solution

• Lithographic thin-film construction
• Excellent crosstalk characteristics
• Non-oxidizing nickel alloy tips
• Innovative force delivery mechanism
• 40GHz, 50GHz, 67GHz, 110GHz and 145GHz connectors available
• GSG, SG, GS, GSGSG, GSSG, SGS configurations
• 50 to 250 µm pitches (other pitches available on request)
• High current version (2 A) available

Advantages

• Superior field confinement reduces unwanted couplings to nearby devices and transmission modes
• Superior measurement accuracy and repeatability
• Small scrub minimizes damage to aluminum pad
• Typical contact resistance < 0. 05 Ω on Al, <0.02Ω on Au
• Save valuable wafer space and reduce pad parasitics by being able to shrink pad geometries to 25 x 35 µ m (best case)