• Ideal for multiport RF/Microwave and high-speed digital signal testing
• Mix DC and RF/Microwave signals on one probe
• Long lifetime – typically over one million (1,000,000) touchdowns
• Excellent performance in temperatures ranging from 10 K to 200°C
• Probe on any pad material with no damage

OptoVue

• Revolutionary technology advancement for wafer and die-level photonics probing
• Real-time in-situ calibrations
• Singulated die testing
• True die-level edge coupling
• In-situ power measurements
• Advanced calibration technologies
• Enables autonomous measurements

Horizontal Die-Level Edge Coupling

• Highest accuracy in test results
• Lowest coupling loss
• Repeatable measurement results due to exclusive automated fiber-to-facet alignment technology
• Reduced risk of damaging fibers with collision avoidance technology
• Ease of use for less experienced users
• Enables close simulation of real-world conditions with device performance closest to the final application

See "Specifications & Details" tab for more key features

• Substrate material: High-resistivity silicon
• Substrate thickness: 275 µm
• Dielectric constant: 11.8
• Nominal Z0: 50 Ω

• Choice of Series resistance or Termination (signal line to ground)
• Use of High Performance RF Resistors
• Choice of Resistor values available
• Choice of body styles, Infinity, ACP or FPC
• Can help to stabilize oscillations in high-gain devices
• Impedance match to low dynamic resistance laser diodes
• Custom configured for your application

High-voltage/current Probes

• On-wafer power device characterization up to 10,000 V DC / 600 A
• Reduced probe and device destruction at high currents up to 20 A DC and 300 A pulse
• Increased isolation resistance and dielectric strength to provide full triaxial capability at high voltage (3,000 V) for low-leakage measurement

Flexibility

• Different substrate carriers for wafers up to 200 mm or single dies
• Probe cards and/or up to eight positioners
• Optional thermal chuck (-60°C to 300°C) and pressure regulation
• Accessories available, such as black bodies and optical motion analysis tools
• Optional upgrade for 300 mm wafer
• Designed for industrial environments
• Covers wide range of measurements (I-V, C-V, RF, MEMS, OPTO)
• Ideal for small structures

See "Specifications & Details" tab for more key features

Focus Microwaves' Harmonic Tuners are engineered to enable precise control of impedance at the fundamental and harmonic frequencies (typically f₀, 2f₀, and 3f₀), making them essential for nonlinear device characterization and power amplifier design.

These tuners feature multiple cascaded probes within a single tuner body, allowing independent or simultaneous tuning at multiple frequencies. Their robust design ensures high tuning accuracy, minimal insertion loss, and excellent repeatability across a broad frequency range. Harmonic tuners are the ideal solution for advanced Load Pull measurements where harmonic control is critical.

Cryogenic Temperatures

• Fully isolated experiment space for true 4K temperatures during probing
• Cryogenic positioners to provide large travel ranges without warming up the device
• Integrated helium pot for high temperature stability of the device under test
• Fully dry cryogen-free cooler eliminates the need for expensive helium circulation systems
• Rapid cool liquid nitrogen option for faster cool down times

See "Specifications & Details" tab for more key features

• Enables wafer probing up to 100 A pulsed and 10A DC
• Innovative multi-fingertip design provides even distribution of current
• Supports up to 500 V
• Replaceable Tungsten probe tips
• Temperature range of -60°C to 300°C
• Minimal contact resistance at the pad-tip junction to reduce heating during measurements, with fewer probe marks
• Prevents against thermal runaway
• Measure devices on wafer at higher currents than ever before
• Small scrub minimizes damage to aluminum pad
• Small footprint – tip fits on a 1 mm pad