Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight SPA for On-wafer DC Parametric Measurements

High-voltage/current Probes

• On-wafer power device characterization up to 10,000 V DC / 600 A
• Reduced probe and device destruction at high currents up to 20 A DC and 300 A pulse
• Increased isolation resistance and dielectric strength to provide full triaxial capability at high voltage (3,000 V) for low-leakage measurement

Flexibility

• Ideal for a wide range of applications such as RF, mm-Wave and sub-THz characterization, FA, DWC, MEMS, optoelectronic tests and WL
• Re-configurable and upgradable as requirements grow
• Minimizes setup times with no loss in performance or accuracy
• Seamless integration of various measurement instruments

Stability

• Solid station frame
• Built-in vibration-isolation solution for superior vibration attenuation
• Rigid microscope bridge
• Compact and rigid mechanical design
• Highly accurate measurement results
• Incorporates best-known methods

Ease of Use

• Ergonomic and straightforward design for comfortable and easy operation
• Low-profile design
• Simple microscope operation
• Quick and ergonomic change of DUT through pull-out stage
• Minimize training efforts
• Fast time to data
• Convenient operation

Customized Solutions for a Variety of Challenging Applications

We are your partner for challenging applications. Our comprehensive technical and application know-how over all probe system platforms and our expertise for customized products is based on an extensive experience over many years. We offer a special demo support in-house or at the customer, as well as after sales support for complicated setups.

• Full-radius, nickel-plated tungsten needles
• Power bypass inductance: 16 nH
• Supports collinear and non-standard needle configurations
• Support up to a maximum of 12 ceramic blades DC needles / contacts
• Ideal for probing the entire circuit for functional test
• DC probes can provide power or slow logic to circuit under test

• Revolutionary technology advancement for wafer and die-level photonics probing
• Real-time in-situ calibrations
• Singulated die testing
• True die-level edge coupling
• In-situ power measurements
• Advanced calibration technologies
• Enables autonomous measurements

See "Specifications & Details" tab for more key features

Three Probe Technologies

• Infinity Probe: best for Al (Si)
• ACP Probe: best for AU (III-Vs)
• |Z| Probe: robust solution (long lifetime)
• Precision contact on a wide variety of materials from 26 GHz to 67 GHz
• Accurate results with excellent crosstalk
• Matching cables and substrates included

Precise Contact Solution

• RF chuck ±3 μm surface planarity
• Unique 500 μm platen contact/ separation stroke with ≤± 1 μm accuracy for repeatable contact
• Precision probe alignment
• Consistent contact force and overtravel
• Stable contact performance

WinCal Calibration Software

• Exclusive 1-, 2-, 3-, and 4-port on-wafer calibration algorithms
• Automated calibration monitoring
• Unique measurement & analysis methods
• Accurate S-parameter measurements
• Automatic calibration setup for higher efficiency
• Fast and easy data interpretation and reporting

• Enables wafer probing up to 100 A pulsed and 10A DC
• Innovative multi-fingertip design provides even distribution of current
• Supports up to 500 V
• Replaceable Tungsten probe tips
• Temperature range of -60°C to 300°C
• Minimal contact resistance at the pad-tip junction to reduce heating during measurements, with fewer probe marks
• Prevents against thermal runaway
• Measure devices on wafer at higher currents than ever before
• Small scrub minimizes damage to aluminum pad
• Small footprint – tip fits on a 1 mm pad

Superior Mechanics

• Highly stable granite base
• Independent, coarse movement of X and Y axes, combined with easy fine adjustments
• Excellent measurement accuracy and repeatability
• Fast navigation and high-precision probe positioning

See "Specifications & Details" tab for more key features