High performance power bypassing provides low-impedance and resonant-free connections to 20 GHz RF bandwidth to 500 MHz Long probe life: > 250,000 contacts Beryllium-copper tips for gold pads or tungsten for aluminum pads Oscillation-free testing of wide-bandwidth analog circuits Use with ACP series probes to provide functional at-speed testing for known-good-die Mix multiple contact types: Ground, Power (Standard or Eye-Pass), Logic/Signal Low and repeatable contact resistance on aluminum pads ( < 0.25 Ω on Al, < 0.01 Ω on Au)

DC-40 GHz bandwidth 10 ps rise time Low insertion and return loss 2 mils of tip-to-tip compliance High probing angle and clearance

Probe station Keysight Streamline Vector Network Analyzer (option up to 53 GHz) Choice of probes Known measurement accuracy traced back to independent standards

Enables wafer probing up to 100 A pulsed and 10A DC Innovative multi-fingertip design provides even distribution of current Supports up to 500 V Replaceable Tungsten probe tips Temperature range of -60°C to 300°C Minimal contact resistance at the pad-tip junction to reduce heating during measurements, with fewer probe marks Prevents against thermal runaway Measure devices on wafer at higher currents than ever before Small scrub minimizes damage to aluminum pad Small footprint – tip fits on a 1 mm pad

Coaxial and triaxial measurements up to 10,000 V High-quality construction with low-noise electrical performance Replaceable probe tips in a variety of tip sizes Temperature range of of -60°C to 300°C Triaxial measurement ensures a much better understanding of device leakage in the off state Highly reliable, stable and repeatable measurements Integrally designed as part of a complete measurement solution

Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight SPA for On-wafer DC Parametric Measurements

Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight A-LFNA for On-wafer R&D Advanced Low-Frequency Noise Measurements

Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight PNA for On-wafer R&D Measurements from RF to millimeter wave to Terahertz

Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight PDA for On-wafer R&D Power Semiconductor Device Characterization Measurements

Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight Photonics Application

Superior field confinement reduces unwanted couplings to nearby devices and transmission modes Superior measurement accuracy and repeatability Small scrub minimizes damage to aluminum pad Typical contact resistance < 0. 05 Ω on Al, <0.02Ω on Au

Probe loss is 3 dB typical between 140 and 200 GHz, S11/S22 15 dB typical Reduced unwanted couplings and transmission modes Able to shrink pad geometries to 25 x 35 µm (best case) Typical contact resistance < 0.05 Ω on Al, < 0.02 Ω on Au