Products
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Three Probe Technologies
Infinity Probe: best for Al (Si)
ACP Probe: best for AU (III-Vs)
|Z| Probe: robust solution (long lifetime)
Precision contact on a wide variety of materials from 26 GHz to 67 GHz
Accurate results with excellent crosstalk
Matching cables and substrates included
Precise Contact Solution
RF chuck ±3 μm surface planarity
Unique 500 μm platen contact/ separation stroke with ≤± 1 μm accuracy for repeatable contact
Precision probe alignment
Consistent contact force and overtravel
Stable contact performance
WinCal Calibration Software
Maximized Field-of-View with Ultra-Sharp Image Quality
Slim Design
Patent-Pending Crash Protection
Intelligent Lens Mount
Application Flexibility
Seamless Integration with Velox Probe Station Control Software
Autonomous Measurement Assistants
Remote Operation
See "Specifications & Details" tab for more information
High performance power bypassing provides low-impedance and resonant-free connections to 20 GHz
RF bandwidth to 500 MHz
Long probe life: > 250,000 contacts
Beryllium-copper tips for gold pads or tungsten for aluminum pads
Oscillation-free testing of wide-bandwidth analog circuits
Use with ACP series probes to provide functional at-speed testing for known-good-die
Mix multiple contact types: Ground, Power (Standard or Eye-Pass), Logic/Signal
Low and repeatable contact resistance on aluminum pads ( < 0.25 Ω on Al, < 0.01 Ω on Au)
DC-40 GHz bandwidth
10 ps rise time
Low insertion and return loss
2 mils of tip-to-tip compliance
High probing angle and clearance
Enables wafer probing up to 100 A pulsed and 10A DC
Innovative multi-fingertip design provides even distribution of current
Supports up to 500 V
Replaceable Tungsten probe tips
Temperature range of -60°C to 300°C
Minimal contact resistance at the pad-tip junction to reduce heating during measurements, with fewer probe marks
Prevents against thermal runaway
Measure devices on wafer at higher currents than ever before
Small scrub minimizes damage to aluminum pad
Small footprint – tip fits on a 1 mm pad
Coaxial and triaxial measurements up to 10,000 V
High-quality construction with low-noise electrical performance
Replaceable probe tips in a variety of tip sizes
Temperature range of of -60°C to 300°C
Triaxial measurement ensures a much better understanding of device leakage in the off state
Highly reliable, stable and repeatable measurements
Integrally designed as part of a complete measurement solution
Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight SPA for On-wafer DC Parametric Measurements
Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight A-LFNA for On-wafer R&D Advanced Low-Frequency Noise Measurements
Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight PNA for On-wafer R&D Measurements from RF to millimeter wave to Terahertz
Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight PDA for On-wafer R&D Power Semiconductor Device Characterization Measurements
Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight Photonics Application
Lithographic thin-film construction
Excellent crosstalk characteristics
Non-oxidizing nickel alloy tips
Innovative force delivery mechanism
40GHz, 50GHz, 67GHz, 110GHz and 145GHz connectors available
GSG, SG, GS, GSGSG, GSSG, SGS configurations
50 to 250 µm pitches (other pitches available on request)
High current version (2 A) available
Advantages